Intel Xeon E3-1105C - AV8062701048800基本资料
类别:CPU |
制造商:Intel |
家族:Xeon |
产品:Xeon E3-1100 |
类型 |
CPU / Microprocessor |
细分市场 |
Embedded |
系列 |
Intel Xeon E3-1100 |
型号 |
E3-1105C |
CPU 编号 |
- AV8062701048800 is an OEM/tray microprocessor
|
频率 |
1000 MHz |
Low power frequency |
800 MHz |
总线速度 |
5 GT/s DMI |
时钟倍频器 |
10 |
封装 |
1284-ball FC-BGA |
接口 |
BGA1284 |
尺寸 |
1.48" x 1.48" / 3.75cm x 3.75cm |
发布时间 |
May 2012 |
S规格号 |
|
生产处理器 |
部件号 |
SR0NS |
AV8062701048800 |
+ | |
架构 / 微体系结构 |
微体系结构 |
Sandy Bridge |
Platform |
Crystal Forest Gladden |
处理器内核 |
Sandy Bridge Gladden |
Core stepping |
D2 (SR0NS) |
制造工艺 |
0.032 micron |
数据位宽 |
64 bit |
The number of cores |
4 |
线程数 |
8 |
浮点单元 |
Integrated |
1级缓存大小 |
4 x 32 KB instruction cache 4 x 32 KB data cache |
2级缓存大小 |
4 x 256 KB |
Level 3 cache size |
6 MB |
Physical memory |
32 GB |
多重处理 |
Uniprocessor |
特征 |
- MMX instructions
- SSE / Streaming SIMD Extensions
- SSE2 / Streaming SIMD Extensions 2
- SSE3 / Streaming SIMD Extensions 3
- SSSE3 / Supplemental Streaming SIMD Extensions 3
- SSE4 / SSE4.1 + SSE4.2 / Streaming SIMD Extensions 4
- AES / Advanced Encryption Standard instructions
- AVX / Advanced Vector Extensions
- EM64T / Extended Memory 64 technology / Intel 64
- NX / XD / Execute disable bit
- HT / Hyper-Threading technology
- VT-x / Virtualization technology
- VT-d / Virtualization for directed I/O
- TXT / Trusted Execution technology
|
低功耗特性 |
- Core C1/C1E, C3, C6 and C7 states
- 封装 C1/C1E, C3, C6 and C7 states
- Enhanced SpeedStep technology
|
集成外设/组件 |
集成显卡 |
None |
Memory controller |
The number of controllers: 1 Memory channels: 2 Supported memory: DDR3-1066, DDR3-1333, DDR3-1600 Maximum memory bandwidth (GB/s): 25.6 ECC supported: Yes |
Other peripherals |
- Direct Media Interface 2.0
- PCI Express 2.0 interface
|
电/热参数 |
V核 |
0.8V - 1.35V |
最小/最大工作温度 |
0°C - 100°C |
热设计功耗 |
25 Watt |
Notes on Intel Xeon E3-1105C |
- Embedded microprocessor
- According to product datasheet, Trusted Execution Technology is not supported
- In the Lowest 频率 Mode the CPU operates at 800 MHz and at 0.65V - 0.95V核 voltage
|